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STP12NK60Z STF12NK60Z
N-channel 650V @Tjmax- 0.53 - 10A - TO-220 /TO-220FP Zener-protected SuperMESHTM Power MOSFET
Features
Type STP12NK60Z STF12NK60Z

VDSS (@Tjmax) 650V 650V
RDS(on)
ID
PW
<0.640 10A 150W <0.640 10A 35W
3
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
3 1 2
1
2
TO-220FP
TO-220
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs.
Internal schematic diagram
Application
Switching application
Order codes
Part number STP12NK60Z STF12NK60Z Marking P12NK60Z F12NK60Z Package TO-220 TO-220FP Packaging Tube Tube
April 2007
Rev 5
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www.st.com 14
Contents
STP12NK60Z - STF12NK60Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STP12NK60Z - STF12NK60Z
Electrical ratings
1
Electrical ratings
(TCASE=25C unless otherwise specified) Table 1.
Symbol VDS VGS ID ID IDM (2) PTOT
Absolute maximum ratings
Value Parameter TO-220 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 10 6.3 40 150 1.2 -15 -2500 600 30 10 6.3
(1) (1)
Unit TO-220FP V V A A A W W/C V V/ns V
40 (1) 35 0.27 2500
VESD(G-S) dv/dt (3) VISO Tj Tstg
Gate source ESD(HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature
-55 to 150 Storage temperature
C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 10A, di/dt < 200 A/s, VDD=480V
Table 2.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 0.83 62.5 300 TO-220FP 3.6 C/W C/W C Unit
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD=50V) Value 10 260 Unit A mJ
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Electrical characteristics
STP12NK60Z - STF12NK60Z
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS = 0 VDS = Max rating VDS = Max rating, TC=125C VGS = 20V VDS = VGS, ID = 100A VGS = 10V, ID = 5A 3 3.75 0.53 Min. 600 1 50 10 4.5 0.64 Typ. Max. Unit V A A A V
Table 5.
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Td(on) Tr Td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=10V, ID =5A VDS = 25V, f = 1MHz, VGS = 0 Min. Typ. 9 1740 195 49 101 22.5 18.5 55 31.5 59 10 32 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
VGS = 0V, VDS = 0V to 480V VDD = 300V, ID =5A, RG=4.7 VGS = 10V, (see Figure 16) VDD = 480V, ID = 10A, VGS = 10V (see Figure 17)
1. Pulsed: pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS
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STP12NK60Z - STF12NK60Z
Electrical characteristics
Table 6.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS = 0 ISD = 10A, di/dt = 100A/s VDD = 50V, Tj = 25C (see Figure 21) ISD = 10A, di/dt = 100A/s VDD = 50V, Tj = 150C (see Figure 21) 358 3 17 460 4.2 18.2 Test conditions Min Typ. Max 10 40 1.6 Unit A A V ns C A ns C A
1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Table 7.
Symbol BVGSO (1)
Gate-source Zener diode
Parameter Gate-Source breakdown voltage Test conditions Igs= 1mA (Open drain) Min 30 Typ Max Unit V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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Electrical characteristics
STP12NK60Z - STF12NK60Z
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
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STP12NK60Z - STF12NK60Z Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
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Electrical characteristics Figure 13. Source-drain diode forward characteristics
STP12NK60Z - STF12NK60Z Figure 14. Normalized breakdown voltage vs temperature
Figure 15. Maximum avalanche energy vs temperature
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STP12NK60Z - STF12NK60Z
Test circuit
3
Test circuit
Figure 17. Gate charge test circuit
Figure 16. Switching times test circuit for resistive load
Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
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Package mechanical data
STP12NK60Z - STF12NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STP12NK60Z - STF12NK60Z
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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Package mechanical data
STP12NK60Z - STF12NK60Z
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STP12NK60Z - STF12NK60Z
Revision history
5
Revision history
Table 8.
Date 12-Apr-2004 06-Sep-2005 13-Sep-2005 05-Sep-2006 26-Apr-2007
Revision history
Revision 1 2 3 4 5 First release Inserted ecopack indication Final version The document has been reformatted The document has been updated on 1: Electrical ratings Changes
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STP12NK60Z - STF12NK60Z
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